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Infineon | BSC100N06LS3GATMA1

Manufacturer Part #

BSC100N06LS3GATMA1

Single N-Channel 60 V 10 mOhm 45 nC OptiMOS™ Power Mosfet - TDSON-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2438
Product Specification Section
Infineon BSC100N06LS3GATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 10mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 45nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 12A
Turn-on Delay Time: 8ns
Turn-off Delay Time: 19ns
Rise Time: 58ns
Fall Time: 8ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.2V
Technology: Si
Height - Max: 1.1mm
Length: 5.49mm
Input Capacitance: 2600pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
95,000
USA:
95,000
On Order:Order inventroy details
90,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$1,675.00
USD
Quantity
Unit Price
5,000
$0.335
10,000
$0.33
25,000+
$0.325
Product Variant Information section