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Manufacturer Part #

BSC109N10NS3GATMA1

Single N-Channel 100 V 10.9 mOhm 26 nC OptiMOS™ Power Mosfet - TDSON-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Date Code: 2523
Product Specification Section
Infineon BSC109N10NS3GATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 10.9mΩ
Rated Power Dissipation: 78|W
Qg Gate Charge: 26nC
Mounting Method: Surface Mount
Pricing Section
Global Stock:
20,000
USA:
20,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$3,175.00
USD
Quantity
Unit Price
5,000
$0.635
10,000+
$0.625