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Infineon | BSO220N03MDGXUMA1

Manufacturer Part #

BSO220N03MDGXUMA1

Dual N-Channel 30 V 27 Ohm 10 nC OptiMOS™ Power Mosfet - DSO-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2312
Product Specification Section
Infineon BSO220N03MDGXUMA1 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 27Ω
Rated Power Dissipation: 1.4W
Qg Gate Charge: 10nC
Gate-Source Voltage-Max [Vgss]: 2.1V
Drain Current: 6A
Turn-on Delay Time: 5.7ns
Turn-off Delay Time: 6.4ns
Rise Time: 2.8ns
Fall Time: 3.4ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.1V
Technology: Si
Height - Max: 1.65mm
Length: 5mm
Input Capacitance: 800pF
Pricing Section
Global Stock:
2,500
USA:
2,500
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
11 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$700.00
USD
Quantity
Unit Price
2,500
$0.28
7,500
$0.275
25,000+
$0.27
Product Variant Information section