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Manufacturer Part #

BSP372NH6327XTSA1

Single N-Channel 100 V 270 mOhm 14.3 nC OptiMOS™ Power Mosfet - SOT-223

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon BSP372NH6327XTSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 230mΩ
Rated Power Dissipation: 1.8W
Qg Gate Charge: 9.5nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 1.8A
Turn-on Delay Time: 5.1ns
Turn-off Delay Time: 47.3ns
Rise Time: 6.7ns
Fall Time: 18ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.4V
Technology: OptiMOS
Input Capacitance: 247pF
Package Style:  SOT-223 (TO-261-4, SC-73)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$275.00
USD
Quantity
Unit Price
1,000
$0.275
3,000
$0.27
5,000
$0.265
15,000
$0.26
25,000+
$0.255
Product Variant Information section