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Infineon | BSR316PH6327XTSA1

Manufacturer Part #

BSR316PH6327XTSA1

Single P-Channel 100 V 360 mA 1.8 Ohm 7 nC SIPMOS® Power Mosfet - PG-SC-59

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2425
Product Specification Section
Infineon BSR316PH6327XTSA1 - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 2.2Ω
Rated Power Dissipation: 0.5W
Qg Gate Charge: 5.3nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 0.36A
Turn-on Delay Time: 5ns
Turn-off Delay Time: 71ns
Rise Time: 6ns
Fall Time: 26ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.5V
Input Capacitance: 124pF
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
6,000
USA:
6,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
19 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$306.00
USD
Quantity
Unit Price
3,000
$0.102
6,000
$0.0999
9,000
$0.0989
12,000
$0.0982
15,000+
$0.0959
Product Variant Information section