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Manufacturer Part #

BSS123Q-13

BSS123 Series 100 V 0.17 A N-Channel Enhancement Mode Mosfet - SOT-23-3

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated BSS123Q-13 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max:
Rated Power Dissipation: 0.3W
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 170mA
Turn-on Delay Time: 8ns
Turn-off Delay Time: 13ns
Rise Time: 8ns
Fall Time: 16ns
Gate Source Threshold: 1.4V
Input Capacitance: 22pF
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
24 Weeks
Minimum Order:
10000
Multiple Of:
10000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$299.00
USD
Quantity
Unit Price
10,000
$0.0299
20,000
$0.0294
30,000
$0.0291
40,000
$0.029
50,000+
$0.0284
Product Variant Information section