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Manufacturer Part #

BSZ019N03LSATMA1

Single N-Channel 30 V 1.9 mOhm 44 nC OptiMOS™ Power Mosfet - TSDSON-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Date Code:
Product Specification Section
Infineon BSZ019N03LSATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 1.9mΩ
Rated Power Dissipation: 2.1|W
Qg Gate Charge: 44nC
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$2,675.00
USD
Quantity
Unit Price
5,000
$0.535
10,000+
$0.525