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Infineon | BSZ0902NSIATMA1

Manufacturer Part #

BSZ0902NSIATMA1

30V, 40A, 2.8mohm, N-Channel, OptiMOS Power-MOSFET, TSDSON-8 FL

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon BSZ0902NSIATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 2.8mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 24nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 21A
Turn-on Delay Time: 3.9ns
Turn-off Delay Time: 20ns
Rise Time: 5.4ns
Fall Time: 3.8ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Input Capacitance: 1500pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
5000
Multiple Of:
5000
Total
$1,875.00
USD
Quantity
Unit Price
5,000
$0.375
10,000
$0.37
15,000+
$0.365
Product Variant Information section