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Diodes Incorporated | DMG4800LK3-13

Manufacturer Part #

DMG4800LK3-13

Single N-Channel 30 V 1.71 W 8.7 nC Silicon Surface Mount Mosfet - TO-252-3

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMG4800LK3-13 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 24mΩ
Rated Power Dissipation: 1.71W
Qg Gate Charge: 8.7nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 10A
Turn-on Delay Time: 5.03ns
Turn-off Delay Time: 26.33ns
Rise Time: 4.5ns
Fall Time: 8.55ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.6V
Technology: Si
Height - Max: 2.39mm
Length: 6.7mm
Input Capacitance: 798pF
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
10,000
Factory Lead Time:
12 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$415.00
USD
Quantity
Unit Price
2,500
$0.166
7,500
$0.163
25,000
$0.16
37,500+
$0.158
Product Variant Information section