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Diodes Incorporated | DMG6602SVT-7

Manufacturer Part #

DMG6602SVT-7

N & P Channel 30 V 60 mOhm Complementary Pair Enhancement Mode Mosfet-TSOT-23-6

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code: 2307
Product Specification Section
Diodes Incorporated DMG6602SVT-7 - Technical Attributes
Attributes Table
Fet Type: Dual N/P-Ch
Drain-to-Source Voltage [Vdss]: 30V/-30V
Drain-Source On Resistance-Max: 60mΩ/95mΩ
Rated Power Dissipation: 1.27|W
Qg Gate Charge: 4nC/4nC
Package Style:  TSOT-26
Mounting Method: Surface Mount
Pricing Section
Global Stock:
6,000
USA:
6,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$235.20
USD
Quantity
Unit Price
3,000
$0.0784
9,000
$0.0765
15,000
$0.0756
45,000
$0.0738
75,000+
$0.0721
Product Variant Information section