text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

Truck-Icon.svgFree shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. DMG6898LSD-13

Diodes Incorporated | DMG6898LSD-13

Manufacturer Part #

DMG6898LSD-13

DMG6898LSD Series 20 V 9.5 A Dual N-Channel Enhancement Mode Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMG6898LSD-13 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 16mΩ
Rated Power Dissipation: 1.28|W
Qg Gate Charge: 11.6nC
Gate-Source Voltage-Max [Vgss]: 12V
Drain Current: 9.5A
Turn-on Delay Time: 11.67ns
Turn-off Delay Time: 35.89ns
Rise Time: 12.49ns
Fall Time: 12.33ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1V
Height - Max: 1.5mm
Length: 4.95mm
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
2500
Multiple Of:
2500
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$600.00
USD
Quantity
Unit Price
2,500
$0.24
5,000
$0.235
37,500+
$0.23
Product Variant Information section