text.skipToContent text.skipToNavigation

Promotion Icon Free shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. DMN3190LDW-13

Diodes Incorporated | DMN3190LDW-13

Manufacturer Part #

DMN3190LDW-13

Dual N-Channel 30 V 190 mOhm Enhancement Mode Mosfet - SOT-363

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMN3190LDW-13 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 190mΩ
Rated Power Dissipation: 0.32W
Qg Gate Charge: 2nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 1A
Turn-on Delay Time: 4.5ns
Turn-off Delay Time: 30.3ns
Rise Time: 8.9ns
Fall Time: 15.6ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.8V
Input Capacitance: 87pF
Package Style:  SOT-363 (SC-70-6, SC-88)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
28 Weeks
Minimum Order:
10000
Multiple Of:
10000
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,780.00
USD
Quantity
Unit Price
10,000
$0.178
20,000
$0.176
30,000
$0.175
40,000+
$0.174
Product Variant Information section