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Diodes Incorporated | DMNH10H028SCT

Manufacturer Part #

DMNH10H028SCT

Single N-Channel 100 V 2.8 W 31.9 nC Silicon Through Hole Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMNH10H028SCT - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 28mΩ
Rated Power Dissipation: 2.8W
Qg Gate Charge: 31.9nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 60A
Turn-on Delay Time: 7.1ns
Turn-off Delay Time: 14ns
Rise Time: 6.6ns
Fall Time: 3.2ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Si
Height - Max: 9.01mm
Length: 10.66mm
Input Capacitance: 1942pF
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
4,800
Factory Lead Time:
12 Weeks
Minimum Order:
50
Multiple Of:
50
Total
$35.10
USD
Quantity
Unit Price
50
$0.702
250
$0.681
1,000
$0.664
2,500
$0.652
6,250+
$0.63
Product Variant Information section