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Diodes Incorporated | DMTH6005LK3-13

Manufacturer Part #

DMTH6005LK3-13

Single N-Channel 60 V 10 mOhm 47.1 nC 2.1 W Silicon Mosfet - TO-252-3

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMTH6005LK3-13 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 10MΩ
Rated Power Dissipation: 2.1W
Qg Gate Charge: 47.1nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 90A
Turn-on Delay Time: 8.3ns
Turn-off Delay Time: 22ns
Rise Time: 9.4ns
Fall Time: 8.9ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Technology: Si
Height - Max: 2.39mm
Length: 6.7mm
Input Capacitance: 2962pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
7,500
Factory Lead Time:
12 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,262.50
USD
Quantity
Unit Price
2,500
$0.505
5,000
$0.50
7,500
$0.495
12,500+
$0.485
Product Variant Information section