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Diodes Incorporated | DMTH6016LK3-13

Manufacturer Part #

DMTH6016LK3-13

DMTH6016LK3 Series 60 V 10.8 A N-Channel Enhancement Mode Mosfet - TO-252-3

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMTH6016LK3-13 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 17mΩ
Rated Power Dissipation: 3.2W
Qg Gate Charge: 17nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 10.8A
Turn-on Delay Time: 3.4ns
Turn-off Delay Time: 12.9ns
Rise Time: 5.2ns
Fall Time: 6.8ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Input Capacitance: 864pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
24 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$662.50
USD
Quantity
Unit Price
2,500
$0.265
5,000
$0.26
12,500
$0.255
25,000+
$0.25
Product Variant Information section