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Manufacturer Part #

FDC3601N

Dual N-Channel 100 V 500 mOhm SMT Specified PowerTrench Mosfet - SSOT-6

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Date Code: 2432
Product Specification Section
onsemi FDC3601N - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 500mΩ
Rated Power Dissipation: 700|mW
Qg Gate Charge: 3.7nC
Package Style:  SSOT-6
Mounting Method: Surface Mount
Features & Applications

The FDC3601N is a FDC series of 100 V 500 mOhm Dual N-Ch Specified PowerTrench Mosfet and is available in SSOT-6 package .

These N-Channel 100V specified MOSFETs are produced with an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Product Features :

  • 1.0 A, 100 V
  • RDS(on) = 500 mΩ@ VGS = 10 V
  • RDS(on) = 550 mΩ @ VGS = 6 V
  • Low gate charge (3.7nC typical)
  • Fast switching speed
  • High performance trench technology for extremely low RDS(ON)
  • SuperSOT™-6 package: small footprint 72%(smaller than standard SO-8); low profile (1mm thick).

Applications :

  • AC-DC Merchant Power Supply - Video game console, flat Panel TV, DVR, STB
  • External AC-DC Merchant Power Supply - Wireless Communications
  • Wireless LAN Access
  • Military & Civil Aerospace
Pricing Section
Global Stock:
93,000
USA:
93,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
3000
Multiple Of:
3000
Total
$645.00
USD
Quantity
Unit Price
3,000
$0.215
9,000
$0.21
30,000+
$0.205