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Manufacturer Part #

FDC6561AN

Dual N-Channel 30 V 0.095 Ohm Logic Level PowerTrench Mosfet SSOT-6

Product Specification Section
onsemi FDC6561AN - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 0.095Ω
Rated Power Dissipation: 0.7W
Qg Gate Charge: 2.3nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 2.5A
Turn-on Delay Time: 6ns
Turn-off Delay Time: 12ns
Rise Time: 10ns
Fall Time: 2ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.8V
Technology: PowerTrench
Input Capacitance: 220pF
Package Style:  SSOT-6
Mounting Method: Surface Mount
Features & Applications

The FDC6561AN is a 30 V 0.095 Ω Dual N-Channel Logic Level PowerTrench Mosfet available in SSOT-6 package .

These N-Channel Logic Level MOSFETs are advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.     These devices are well suited for all applications where small size is desireable but especially low cost DC/DC conversion in battery powered systems.

Features:

  • 2.5 A, 30 V.   RDS(ON) = 0.095 Ω @ VGS = 10 V, RDS(ON) = 0.145 Ω @ VGS = 4.5 V.
  • Very fast switching.
  • Low gate charge (2.1nC typical).
  • SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).

Applications:

  • AC-DC Merchant Power Supply - Video game console, flat Panel TV, DVR, STB
  • External AC-DC Merchant Power Supply - Wireless Communications
  • Wireless LAN Card & Broadband Access
  • Military & Civil Aerospace
  • Routers & LAN Switches
  • Medical Electronics/Devices
Pricing Section
Global Stock:
18,000
USA:
18,000
6,000
Factory Stock:Factory Stock:
1
Factory Lead Time:
16 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$660.00
USD
Quantity
Unit Price
3,000
$0.22
9,000
$0.215
30,000+
$0.21