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Manufacturer Part #

FDN5630

N-Channel 60 V 0.5 W 100 mOhm 10 nC SMT PowerTrench Mosfet - SSOT-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi FDN5630 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 100mΩ
Rated Power Dissipation: 0.46W
Qg Gate Charge: 7nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 1.7A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 15ns
Rise Time: 6ns
Fall Time: 5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.4V
Technology: PowerTrench
Input Capacitance: 400pF
Package Style:  SSOT-3
Mounting Method: Surface Mount
$Features & Applications

The FDN5630 is 60 V 100 mΩ N-Channel MOSFET it has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

This MOSFET features very low RDS(ON) in a small SOT23 footprint. The PowerTrench technology provides faster switching than other MOSFETs with comparable RDS(ON) specifications. The result is higher overall efficiency with less board space.

Features:

  • 1.7 A, 60 V. RDS(ON) = 0.100 Ω @ VGS = 10 V, RDS(ON) = 0.120 Ω @ VGS = 6 V.
  • Optimized for use in high frequency DC/DC converters.
  • Low gate charge.
  • Very fast switching.
  • SuperSOT™ - 3 provides low RDS(ON) in SOT23 footprint

Applications:

  • DC/DC converter
  • Motor drives
Pricing Section
Global Stock:
0
USA:
0
75,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
9000
Multiple Of:
3000
Total
$4,950.00
USD
Quantity
Web Price
3,000
$0.68
6,000
$0.555
9,000
$0.55
12,000+
$0.545
Product Variant Information section