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onsemi | FDS6375

Manufacturer Part #

FDS6375

P-Channel 20 V 24 mOhm 2.5V Specified PowerTrench Mosfet SOIC-8

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi FDS6375 - Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 24mΩ
Rated Power Dissipation: 2.5|W
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The FDS6375 is a 20 V 24 mΩ V P-Channel 2.5 V specified MOSFET is a rugged gate version of advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 V – 8 V)

Features:

  • -8.0 A, -20 V
  • RDS(on) = 24 mΩ @ VGS = -4.5 V
  • RDS(on) = 32 mΩ @ VGS = -2.5 V
  • Low gate charge (26nC typical)
  • Fast switching speed
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability

Applications:

  • Power management
  • Load switch
  • Battery protection
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
21 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,412.50
USD
Quantity
Unit Price
2,500
$0.565
5,000
$0.56
7,500
$0.555
12,500+
$0.545
Product Variant Information section