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onsemi | FQB22P10TM

Manufacturer Part #

FQB22P10TM

P-Channel 100 V 22 A 125 mOhm Surface Mount Q-FET Mosfet - D2PAK

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2430
Product Specification Section
onsemi FQB22P10TM - Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 0.125Ω
Rated Power Dissipation: 3.75|W
Qg Gate Charge: 40nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Features & Applications

The FQB22P10 is a 100 V 0.125 Ω P-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features:

  • -22 A, -100 V, RDS(on) = 0.125 Ω @VGS = -10 V
  • Low gate charge ( typical 40 nC)
  • Low Crss ( typical 160 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • 175° maximum junction temperature rating
  • RoHS Compliant

Applications:

  • Amplifier
  • High efficiency switching
  • DC/DC converters
  • DC motor control
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
6 Weeks
Minimum Order:
800
Multiple Of:
800
Total
$772.00
USD
Quantity
Unit Price
800
$0.965
1,600
$0.955
2,400
$0.945
3,200
$0.94
4,000+
$0.925
Product Variant Information section