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onsemi | FQT1N80TF-WS

Manufacturer Part #

FQT1N80TF-WS

MOSFET 800V 0.2A 20Ohm N-Channel

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi FQT1N80TF-WS - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 800V
Drain-Source On Resistance-Max: 20Ω
Rated Power Dissipation: 2.1W
Qg Gate Charge: 5.5C
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 0.2A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 15ns
Rise Time: 25ns
Fall Time: 25ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 5V
Input Capacitance: 150pF
Series: QFET®
Package Style:  SOT-223 (TO-261-4)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
289,165
Factory Lead Time:
8 Weeks
Minimum Order:
4000
Multiple Of:
4000
Total
$1,720.00
USD
Quantity
Unit Price
4,000
$0.43
8,000
$0.425
16,000
$0.42
20,000+
$0.415
Product Variant Information section