text.skipToContent text.skipToNavigation

Promotion Icon Free shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. FQT7N10LTF

onsemi | FQT7N10LTF

Manufacturer Part #

FQT7N10LTF

N-Channel 100 V 0.35 Ohm Surface Mount Mosfet - SOT-223

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2506
Product Specification Section
onsemi FQT7N10LTF - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 0.35Ω
Rated Power Dissipation: 2|W
Qg Gate Charge: 4.6nC
Package Style:  SOT-223 (TO-261-4, SC-73)
Mounting Method: Surface Mount
Features & Applications

The FQT7N10LTF is a N-Channel enhancement mode power field effect transistor.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control. 

Features:

  • 1.7 A, 100 V
  • RDS(on) = 0.35 Ω @VGS = 10 V
  • Low gate charge (typical 4.6 nC)
  • Low Crss (typical 12 pF)
  • Fast switching
  • Improved dv/dt capability
  • Low level gate drive requirments allowingdirect operationfrom logic drives

Applications:

  • TBA

 

Pricing Section
Global Stock:
936,000
USA:
936,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
21 Weeks
Minimum Order:
4000
Multiple Of:
4000
Total
$668.00
USD
Quantity
Unit Price
4,000
$0.167
8,000
$0.166
12,000
$0.164
20,000
$0.163
40,000+
$0.16
Product Variant Information section