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onsemi | FQT7N10LTF

Référence fabricant

FQT7N10LTF

N-Channel 100 V 0.35 Ohm Surface Mount Mosfet - SOT-223

Modèle ECAD:
Nom du fabricant: onsemi
Emballage standard:
Product Variant Information section
Code de date: 2523
Product Specification Section
onsemi FQT7N10LTF - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 0.35Ω
Rated Power Dissipation: 2|W
Qg Gate Charge: 4.6nC
Style d'emballage :  SOT-223 (TO-261-4, SC-73)
Méthode de montage : Surface Mount
Fonctionnalités et applications
The FQT7N10LTF is a N-Channel enhancement mode power field effect transistor produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control. 

Features:

  • 1.7 A, 100 V
  • RDS(on) = 0.35 O @VGS = 10 V
  • Low gate charge ( typical 4.6 nC)
  • Low Crss ( typical 12 pF)
  • Fast switching
  • Improved dv/dt capability
  • Low level gate drive requirments allowingdirect operationfrom logic drives

Applications:

  • TBA

View the complete FQT7 series of Mosfets

Pricing Section
Stock global :
184 000
États-Unis:
184 000
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
21 Semaines
Commande minimale :
4000
Multiples de :
4000
Total 
668,00 $
USD
Quantité
Prix unitaire
4 000
$0.167
8 000
$0.166
12 000
$0.164
20 000
$0.163
40 000+
$0.16
Product Variant Information section