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Infineon | IMW120R220M1HXKSA1

Manufacturer Part #

IMW120R220M1HXKSA1

Single N-Channel 1200 V 13 A 75 W CoolSiC™ Through Hole Mosfet - TO-247-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2410
Product Specification Section
Infineon IMW120R220M1HXKSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain-Source On Resistance-Max: 294mΩ
Rated Power Dissipation: 75W
Qg Gate Charge: 8.5nC
Gate-Source Voltage-Max [Vgss]: 23V
Drain Current: 13A
Turn-on Delay Time: 5ns
Turn-off Delay Time: 10ns
Rise Time: 1.4ns
Fall Time: 14ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4.5V
Technology: SiC
Input Capacitance: 289pF
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:Order inventroy details
480
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
30
Multiple Of:
30
Total
$82.50
USD
Quantity
Unit Price
30
$2.75
90
$2.71
300
$2.67
600
$2.65
1,200+
$2.61
Product Variant Information section