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  6. IMZ120R350M1HXKSA1

Infineon | IMZ120R350M1HXKSA1

Manufacturer Part #

IMZ120R350M1HXKSA1

IMZ Series 1200 V 350 mOhm 5.3 nC Through Hole Silicon Carbide Mosfet - TO-247-4

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IMZ120R350M1HXKSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain-Source On Resistance-Max: 468mΩ
Rated Power Dissipation: 60W
Qg Gate Charge: 5.3nC
Gate-Source Voltage-Max [Vgss]: 23V
Drain Current: 4.7A
Turn-on Delay Time: 4.8ns
Turn-off Delay Time: 10.8ns
Rise Time: 0.7ns
Fall Time: 19.3ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4.5V
Technology: SiC
Input Capacitance: 182pF
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
240
Multiple Of:
30
Total
$624.00
USD
Quantity
Unit Price
240
$2.60
480
$2.58
720
$2.57
960
$2.56
1,200+
$2.53
Product Variant Information section