IPA60R170CFD7XKSA1 in Tube by Infineon | Mosfets | Future Electronics
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Manufacturer Part #

IPA60R170CFD7XKSA1

N-Channel 600 V 8 A 26 W Through Hole CoolMOS™ MOSFET - PG-TO-220FP

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2333
Product Specification Section
Infineon IPA60R170CFD7XKSA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 170mΩ
Rated Power Dissipation: 26W
Qg Gate Charge: 28nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 8A
Turn-on Delay Time: 31ns
Turn-off Delay Time: 68ns
Rise Time: 15ns
Fall Time: 9ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4.5V
Input Capacitance: 1199pF
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
500
Multiple Of:
50
Total
$610.00
USD
Quantity
Unit Price
50
$1.25
200
$1.23
500
$1.22
1,250
$1.21
2,000+
$1.19
Product Variant Information section