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Infineon | IPA65R600E6XKSA1

Manufacturer Part #

IPA65R600E6XKSA1

Single N-Channel 650 V 600 mOhm 23 nC CoolMOS™ Power Mosfet - TO-220-3FP

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPA65R600E6XKSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 600mΩ
Rated Power Dissipation: 28|W
Qg Gate Charge: 23nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 7.3A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 64ns
Rise Time: 8ns
Fall Time: 11ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Height - Max: 16.15mm
Length: 10.66mm
Input Capacitance: 440pF
Package Style:  TO-220FP (TO-220FPAB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
10 Weeks
Minimum Order:
500
Multiple Of:
50
Total
$370.00
USD
Quantity
Unit Price
500
$0.74
1,500
$0.725
2,000
$0.72
5,000
$0.71
7,500+
$0.695
Product Variant Information section