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Manufacturer Part #
IPB020N10N5LFATMA1
IPB020N10N5LF Series 100 V 176 A 2 mOhm Single N-Channel MOSFET - TO-263-3
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:1000 per Reel Package Style:TO-263-3 (D2PAK) Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2443 | ||||||||||
Product Specification Section
Infineon IPB020N10N5LFATMA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Wafer Size Change
11/07/2022 Details and Download
Subject Introduction of 300mm wafer diameter at Infineon Technologies Austria AG and Infineon Technologies Dresden GmbH & Co. KG.Reason Next phase of Front End capacity expansion by introduction of 300mm wafer diameter to support continuous increasing demand.Intended start of delivery 2022-12-31 or earlier based on customer approval
Part Status:
Active
Active
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Infineon IPB020N10N5LFATMA1 - Technical Attributes
Attributes Table
| Product Status: | Active |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 2mΩ |
| Rated Power Dissipation: | 313W |
| Qg Gate Charge: | 195nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 176A |
| Turn-on Delay Time: | 7ns |
| Turn-off Delay Time: | 128ns |
| Rise Time: | 28ns |
| Fall Time: | 82ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 3.3V |
| Technology: | OptiMOS |
| Input Capacitance: | 650pF |
| Series: | OptiMOS 5 |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
1,000
USA:
1,000
On Order:
0
Factory Lead Time:
18 Weeks
Quantity
Unit Price
1,000
$2.81
2,000+
$2.77
Product Variant Information section
Available Packaging
Package Qty:
1000 per Reel
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount