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Infineon | IPB024N10N5ATMA1

Manufacturer Part #

IPB024N10N5ATMA1

IPB024N10N5 Series 100 V 221 A 2.4 mOhm Single N-Channel MOSFET - TO-263-7

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2350
Product Specification Section
Infineon IPB024N10N5ATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 2.4mΩ
Rated Power Dissipation: 250W
Qg Gate Charge: 111nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 221A
Turn-on Delay Time: 20ns
Turn-off Delay Time: 42ns
Rise Time: 12ns
Fall Time: 13ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Technology: OptiMOS
Input Capacitance: 7870pF
Series: OptiMOS 5
Package Style:  TO-263-7 (D2PAK7)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
11 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$1,910.00
USD
Quantity
Unit Price
1,000
$1.91
2,000
$1.90
3,000
$1.89
4,000+
$1.88
Product Variant Information section