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Infineon | IPB110N20N3LFATMA1

Manufacturer Part #

IPB110N20N3LFATMA1

N-Channel 200 V 88 A 250 W Surface Mount OptiMOS 3 Linear Mosfet - D²PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2443
Product Specification Section
Infineon IPB110N20N3LFATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 11mΩ
Rated Power Dissipation: 250W
Qg Gate Charge: 76nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 88A
Turn-on Delay Time: 6ns
Turn-off Delay Time: 79ns
Rise Time: 70ns
Fall Time: 26ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.2V
Technology: OptiMOS
Input Capacitance: 500pF
Series: OptiMOS 3
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
1,000
USA:
1,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
29 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$3,610.00
USD
Quantity
Unit Price
1,000
$3.61
2,000+
$3.57
Product Variant Information section