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Manufacturer Part #

IPB120N04S401ATMA1

Single N-Channel 40 V 1.5 mOhm 135 nC OptiMOS™ Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPB120N04S401ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 1.5mΩ
Rated Power Dissipation: 188|W
Qg Gate Charge: 135nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
9 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$1,450.00
USD
Quantity
Unit Price
1,000
$1.45
2,000
$1.44
3,000
$1.43
5,000+
$1.41
Product Variant Information section