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Infineon | IPB65R095C7ATMA2

Manufacturer Part #

IPB65R095C7ATMA2

MOSFET N-CH 650V 24A TO263-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPB65R095C7ATMA2 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 95mΩ
Rated Power Dissipation: 128W
Qg Gate Charge: 45nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 24A
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Input Capacitance: 2140pF
Series: TO-263-3
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$2,690.00
USD
Quantity
Unit Price
1,000
$2.69
2,000
$2.67
3,000+
$2.65
Product Variant Information section