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Infineon | IPB65R150CFDAATMA1

Manufacturer Part #

IPB65R150CFDAATMA1

IPB65R150CFDA Series 650 V 22.4 A CoolMOS CFDA Power Transistor - TO-263-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPB65R150CFDAATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 0.15Ω
Rated Power Dissipation: 195.3W
Qg Gate Charge: 86nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 22.4A
Turn-on Delay Time: 12.4ns
Turn-off Delay Time: 52.8ns
Rise Time: 7.6ns
Fall Time: 5.6ns
Operating Temp Range: -40°C to +150°C
Gate Source Threshold: 4V
Technology: CoolMOS
Input Capacitance: 2340pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$2,160.00
USD
Quantity
Unit Price
1,000
$2.16
2,000
$2.14
3,000
$2.13
4,000+
$2.12
Product Variant Information section