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Manufacturer Part #

IPB80P04P4L06ATMA2

P-Channel 40 V 80 A 88 W Surface Mount OptiMOS-P2 Power Mosfet - PG-TO263-3-2

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPB80P04P4L06ATMA2 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 6.4mΩ
Rated Power Dissipation: 88W
Qg Gate Charge: 80nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 80A
Turn-on Delay Time: 17ns
Turn-off Delay Time: 61ns
Rise Time: 12ns
Fall Time: 44ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 1.7V
Technology: OptiMOS
Input Capacitance: 5060pF
Series: OptiMOS-P2
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
9 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$950.00
USD
Quantity
Unit Price
1,000
$0.95
2,000
$0.935
3,000
$0.93
4,000
$0.925
5,000+
$0.905
Product Variant Information section