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Infineon | IPD031N03LGATMA1

Manufacturer Part #

IPD031N03LGATMA1

IPD031N03LG Series 30 V 90 A 3.1 mOhm Single N-Channel MOSFET - TO-252-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2519
Product Specification Section
Infineon IPD031N03LGATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 3.1mΩ
Rated Power Dissipation: 94W
Qg Gate Charge: 51nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 90A
Turn-on Delay Time: 9ns
Turn-off Delay Time: 34ns
Rise Time: 6ns
Fall Time: 5ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 1V
Input Capacitance: 5300F
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,125.00
USD
Quantity
Unit Price
2,500
$0.45
5,000
$0.445
7,500
$0.44
12,500+
$0.435
Product Variant Information section