text.skipToContent text.skipToNavigation

Manufacturer Part #

IPD036N04LGATMA1

Single N-Channel 40 V 3.6 mOhm 59 nC OptiMOS™ Power Mosfet - DPAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2435
Product Specification Section
Infineon IPD036N04LGATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 3.6mΩ
Rated Power Dissipation: 94W
Qg Gate Charge: 59nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 90A
Turn-on Delay Time: 9.3ns
Turn-off Delay Time: 37ns
Rise Time: 5.4ns
Fall Time: 6ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2V
Technology: OptiMOS
Input Capacitance: 4700pF
Series: OptiMOS 3
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
2,500
USA:
2,500
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
10 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,187.50
USD
Quantity
Unit Price
2,500
$0.475
5,000
$0.47
10,000
$0.465
12,500+
$0.46
Product Variant Information section