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Manufacturer Part #

IPD068N10N3GATMA1

Single N-Channel 100 V 6.8 mOhm 51 nC OptiMOS™ Power Mosfet - TO-252-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2440
Product Specification Section
Infineon IPD068N10N3GATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 6.8mΩ
Rated Power Dissipation: 150|W
Qg Gate Charge: 51nC
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
2,500
USA:
2,500
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$2,325.00
USD
Quantity
Unit Price
2,500
$0.93
5,000
$0.92
7,500+
$0.905
Product Variant Information section