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Manufacturer Part #

IPD180N10N3GATMA1

Single N-Channel 100 V 18 mOhm 19 nC OptiMOS™ Power Mosfet - DPAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPD180N10N3GATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 18mΩ
Rated Power Dissipation: 71W
Qg Gate Charge: 19nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 43A
Turn-on Delay Time: 12ns
Turn-off Delay Time: 19ns
Rise Time: 12ns
Fall Time: 5ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2.7V
Technology: OptiMOS
Input Capacitance: 1350pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,187.50
USD
Quantity
Unit Price
2,500
$0.475
5,000
$0.47
7,500
$0.465
12,500+
$0.455
Product Variant Information section