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Infineon | IPD65R190C7ATMA1

Manufacturer Part #

IPD65R190C7ATMA1

IPD65R190C7 Series 650 V 13 A 190 mOhm 72 W 23 nC N-Channel MOSFET - TO-252

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPD65R190C7ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 0.19Ω
Rated Power Dissipation: 72W
Qg Gate Charge: 23nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 13A
Turn-on Delay Time: 11ns
Turn-off Delay Time: 54ns
Rise Time: 11ns
Fall Time: 9ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.5V
Technology: CoolMOS
Input Capacitance: 1150pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$2,875.00
USD
Quantity
Unit Price
2,500
$1.15
5,000+
$1.14
Product Variant Information section