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Manufacturer Part #

IPD65R650CEAUMA1

CoolMOS

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPD65R650CEAUMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 650mΩ
Rated Power Dissipation: 63W
Qg Gate Charge: 23C
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 10.1A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 64ns
Rise Time: 8ns
Fall Time: 11ns
Operating Temp Range: -40°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 440pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$875.00
USD
Quantity
Unit Price
2,500
$0.35
7,500
$0.345
12,500+
$0.34
Product Variant Information section