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Manufacturer Part #

IPD80R1K4P7ATMA1

Single N-Channel 800 V 1.4 Ohm 10 nC CoolMOS™ Power Mosfet - DPAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Date Code: 1727
Product Specification Section
Infineon IPD80R1K4P7ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 800V
Drain-Source On Resistance-Max: 1.4Ω
Rated Power Dissipation: 32W
Qg Gate Charge: 10nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 4A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 40ns
Rise Time: 8ns
Fall Time: 20ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 250pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
20
USA:
20
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
1
Multiple Of:
1
Total
$0.94
USD
Quantity
Unit Price
1
$0.94
15
$0.835
75
$0.775
250
$0.725
1,250+
$0.665