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Infineon | IPD80R2K0P7ATMA1

Manufacturer Part #

IPD80R2K0P7ATMA1

Single N-Channel 800 V 2 Ohm 9 nC CoolMOS™ Power Mosfet - DPAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2428
Product Specification Section
Infineon IPD80R2K0P7ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 800V
Drain-Source On Resistance-Max: 2Ω
Rated Power Dissipation: 24W
Qg Gate Charge: 9nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 3A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 40ns
Rise Time: 8ns
Fall Time: 20ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 175pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
2,500
USA:
2,500
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$837.50
USD
Quantity
Unit Price
2,500
$0.335
5,000
$0.33
7,500
$0.325
12,500+
$0.32
Product Variant Information section