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Infineon Technologies | IPG20N06S4L26ATMA1

Manufacturer Part #

IPG20N06S4L26ATMA1

Dual N-Channel 60 V 26 mOhm 15 nC OptiMOS™ Power Mosfet - TDSON-8-4

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
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Product Specification Section
Infineon Technologies IPG20N06S4L26ATMA1 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 26mΩ
Rated Power Dissipation: 33W
Qg Gate Charge: 15nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 20A
Turn-on Delay Time: 5ns
Turn-off Delay Time: 18ns
Rise Time: 1.5ns
Fall Time: 10ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 1.7V
Technology: OptiMOS
Input Capacitance: 1100pF
Package Style:  TDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
39 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$5,900.00
USD
Quantity
Unit Price
5,000+
$1.18
Product Variant Information section