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Manufacturer Part #

IPG20N10S436AATMA1

Dual N-Channel 100 V 36 mOhm 9.4 nC OptiMOS™ Power Mosfet - TDSON-8-10

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Date Code:
Product Specification Section
Infineon IPG20N10S436AATMA1 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 36mΩ
Rated Power Dissipation: 43|W
Qg Gate Charge: 9.4nC
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$2,875.00
USD
Quantity
Unit Price
5,000
$0.575
10,000+
$0.56