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Manufacturer Part #

IPI024N06N3GXKSA1

Single N-Channel 60 V 2.4 mOhm 206 nC OptiMOS™ Power Mosfet - I2PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPI024N06N3GXKSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 2.4mΩ
Rated Power Dissipation: 250|W
Qg Gate Charge: 206nC
Package Style:  TO-262 (I2PAK)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
500
Multiple Of:
50
Total
$820.00
USD
Quantity
Unit Price
50
$1.64
1,000
$1.63
1,500
$1.62
2,500+
$1.60
Product Variant Information section