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Infineon | IPL65R099C7AUMA1

Manufacturer Part #

IPL65R099C7AUMA1

Single N-Channel 650 V 99 mOhm 45 nC CoolMOS™ Power Mosfet - PG-VSON-4

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPL65R099C7AUMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 99mΩ
Rated Power Dissipation: 128|W
Qg Gate Charge: 45nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 21A
Turn-on Delay Time: 11ns
Turn-off Delay Time: 89ns
Rise Time: 5ns
Fall Time: 12ns
Operating Temp Range: -40°C to +150°C
Gate Source Threshold: 3.5V
Technology: CoolMOS
Height - Max: 1.1mm
Length: 8.1mm
Input Capacitance: 2140pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
39 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$7,860.00
USD
Quantity
Unit Price
3,000+
$2.62
Product Variant Information section