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Infineon | IPN70R2K0P7SATMA1

Manufacturer Part #

IPN70R2K0P7SATMA1

IPN70R2K0P7S Series Single N-Channel 700 V 2 Ohm CoolMOS™ Power Mosfet - SOT-223

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPN70R2K0P7SATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 700V
Drain-Source On Resistance-Max: 2Ω
Rated Power Dissipation: 6W
Qg Gate Charge: 3.8nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 5.7A
Turn-on Delay Time: 12ns
Turn-off Delay Time: 60ns
Rise Time: 5.5ns
Fall Time: 70ns
Operating Temp Range: -40°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 130pF
Series: CoolMOSª
Package Style:  SOT-223 (TO-261-4)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
19 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$420.00
USD
Quantity
Unit Price
3,000
$0.14
9,000
$0.138
12,000
$0.137
30,000
$0.135
45,000+
$0.133
Product Variant Information section