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Infineon | IPN80R3K3P7ATMA1

Manufacturer Part #

IPN80R3K3P7ATMA1

N-Channel 800 V 1.9A (Tc) 6.1W (Tc) Surface Mount PG-SOT223

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPN80R3K3P7ATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 800V
Drain-Source On Resistance-Max: 3.3Ω
Rated Power Dissipation: 6.1W
Qg Gate Charge: 5.8nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 1.9A
Turn-on Delay Time: 12ns
Turn-off Delay Time: 40ns
Rise Time: 10ns
Fall Time: 40ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.5V
Technology: CoolMOS
Input Capacitance: 120pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$720.00
USD
Quantity
Unit Price
3,000
$0.24
9,000
$0.235
30,000+
$0.23
Product Variant Information section