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Infineon | IPN95R3K7P7ATMA1

Manufacturer Part #

IPN95R3K7P7ATMA1

N-Channel 950 V 2 A 6 W CoolMOS P7 SJ Power Device MOSFET - PG-SOT-223

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2527
Product Specification Section
Infineon IPN95R3K7P7ATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 950V
Drain-Source On Resistance-Max: 3.7Ω
Rated Power Dissipation: 6W
Qg Gate Charge: 6nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 2A
Turn-on Delay Time: 7ns
Turn-off Delay Time: 46ns
Rise Time: 23ns
Fall Time: 40ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.5V
Input Capacitance: 196pF
Package Style:  SOT-223 (TO-261-4, SC-73)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
33,000
USA:
33,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$900.00
USD
Quantity
Unit Price
3,000
$0.30
6,000
$0.295
12,000+
$0.29
Product Variant Information section