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Manufacturer Part #

IPP111N15N3GXKSA1

Single N-Channel 150 V 11.1 mOhm 41 nC OptiMOS™ Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2341
Product Specification Section
Infineon IPP111N15N3GXKSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 150V
Drain-Source On Resistance-Max: 11.1mΩ
Rated Power Dissipation: 214|W
Qg Gate Charge: 41nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
2
USA:
2
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
2
Multiple Of:
500
Total
$2.72
USD
Quantity
Unit Price
50
$1.36
1,000
$1.35
2,500
$1.34
5,000+
$1.32
Product Variant Information section